发明名称 SEMICONDUCTOR LIGHT EMITTING ELEMENT AND ITS FABRICATING METHOD
摘要 PROBLEM TO BE SOLVED: To enhance light take out efficiency. SOLUTION: The semiconductor light emitting element comprises a translucent semiconductor substrate 100, a buffer layer 101 formed on the semiconductor substrate 100 while matching the lattice therewith, an emission layer 104 formed on the buffer layer 101, a first electrode 107 arranged on the buffer layer 101, and a second electrode 108 arranged on the emission layer 104 wherein light take out efficiency is enhanced by taking out light emitted from the emission layer 104 from the side of the substrate 100 having translucency.
申请公布号 JP2001358364(A) 申请公布日期 2001.12.26
申请号 JP20000179591 申请日期 2000.06.15
申请人 TOSHIBA ELECTRONIC ENGINEERING CORP;TOSHIBA CORP 发明人 NITTA KOICHI;OKAZAKI HARUHIKO;WATANABE YUKIO;FURUKAWA CHISATO
分类号 H01L33/06;H01L33/08;H01L33/10;H01L33/12;H01L33/22;H01L33/32;H01L33/60 主分类号 H01L33/06
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