| 摘要 |
PROBLEM TO BE SOLVED: To provide a two-dimensional picture detector where a conversion layer which directly converts light or a radiation into a charge signal can stably be used by high voltage driving. SOLUTION: A semiconductor conversion film 3a is formed on an active matrix substrate 4 where gate lines and data lines are wired in a grid shape and a TFT switching element, an accumulation capacitor and a pixel electrode are twodimensinally arranged by vapor deposition. A waved shape face 2 is formed at the peripheral part of the semiconductor conversion film 3a by using a vapor deposition mask. Then, an upper electrode 1 is formed in the center. The high voltage of DC is applied between the upper electrode 1 and ground from a power source 5. A creeping distance becomes long by the corrugated face 2 and a system stably operates without causing creeping discharge. The semiconductor conversion layer 3a generates the charge signal corresponding to the energy of an incident line and the active matrix substrate 4 reads the charge signal.
|
