MASK FOR EXPOSURE AND METHOD FOR CORRECTING ITS PATTERN

摘要

PROBLEM TO BE SOLVED: To provide a mask for exposure capable of suppressing shortening corresponding to the environment without increasing the chip area and a method for correcting its pattern. SOLUTION: A mask pattern having a line width below a stipulated value is selected from mask patterns each projecting from an element region, the distance from the selected mask pattern to an adjacent pattern is calculated and the mask pattern is corrected corresponding to the distance. The desired mask pattern can be formed corresponding to the surrounding environment.