| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device provided with a plurality of protrusions for controlling the thickness of junctions on a backside pattern of an insulation substrate or on a base plate, wherein a thermal stress generated in the junctions around the protrusions can be suppressed, an anti-crack property of the junctions can be increased, and a high reliability can be secured. SOLUTION: The backside pattern of the insulation substrate or the base plate is provided with a plurality of protrusions for controlling the thickness of the junctions between the backside pattern and base plate. An end of each protrusion facing the periphery of the backside pattern is located 1 to 10 mm away from the peripheral edge of the pattern. |
