| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma-processing method, where together with a sample comprising a silicon nitride film, anisotropic and precise dimension, working and superior selectivity with respect to a base-material silicon oxide film. SOLUTION: In working with a sample comprising the silicon oxide film, a mixed atmosphere of chlorine gas containing no fluorine element and aluminum is turned into a plasma, for suppressing etching speed of a silicon oxide film, resulting in superior working characteristics.
|
