| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming embedded wiring of flat surface by preventing dishing at chemical-mechanical polishing, independently of layout, such as wiring width, density level of wiring or the like. SOLUTION: The method includes a first process, where a channel for embedded wiring, is formed at a flat interlayer insulating film 4 formed on a silicon substrate 1, a second process where a barrier metal 6 and Cu films 7 and 7a which are to be a main wiring, a third process where an unwanted Cu film on the interlayer insulating film 4 is removed, with a thin skin left out, by a first chemical-mechanical polishing, a fourth process where only the pellicle- state Cu film is removed by etching until the barrier metal 6 is exposed, and a fifth process where an unwanted barrier metal is removed by a second chemical-mechanical polishing.
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