| 摘要 |
<p>PROBLEM TO BE SOLVED: To reliably prevent a defective transfer such as a ghost by effectively providing a phase shift effect to a fine light transmissive pattern and providing a perfect light shielding effect to a large light transmissive pattern which does not require a phase shift effect. SOLUTION: The objective method for producing a semiconductor integrated circuit includes pattern transfer using a halftone type phase shift mask obtained by disposing a translucent phase shift film 2a on a transparent substrate 1. The phase shift mask has such a fine light transmissive pattern part P1 as to require a phase shift effect, such a large light transmissive pattern part P2 as not to require a phase shift, effect, a pattern surrounding part H laid out and formed by the translucent phase shift film 2a and a light shielding part S laid out and formed by a light shielding film 3a. The pattern surrounding part H is set only around the fine pattern part P1 and is not set around the large pattern part P2.</p> |
