| 摘要 |
PROBLEM TO BE SOLVED: To reduce element resistance and obtain beam of high quality in a semiconductor laser device. SOLUTION: An n-Ga1-Z4AlZ4N composition slant layer 20 is formed between an n-GaN contact layer 19 and an n-Ga1-Z1AlZ1N/GaN superlattice clad layer 21. An n-Ga1-Z5AlZ5N composition slant layer 22 is formed between the n-Ga1-Z1 AlZ1N/GaN superlattice clad layer 21 and an n or i-Ga1-Z2AlZ2N optical waveguide layer 23. A p-Ga1-Z5AlZ5N composition slant layer 27 is formed between a p or i-Ga1-Z2AlZ2N optical waveguide layer 26 and a p-Ga1-Z1AlZ1N/ GaN superlattice clad layer 28. A p-Ga1-Z4AlZ4N composition slant layer 29 is formed between the p-Ga1-Z1AlZ1N/GaN superlattice clad layer 28 and a p-GaN contact layer 30. Regarding the composition, z4 of the Ga1-Z4AlZ4N composition slant layers is changed continuously from 0 as far as the composition corresponding to band gap of the Ga1-Z1AlZ1N/GaN superlattice clad layer, and z5 of the Ga1-Z5AlZ5N composition slant layers is changed continuously from z2 as far as the composition corresponding to band gap of the Ga1-Z1AlZ1N /GaN superlattice clad layer.
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