| 摘要 |
PROBLEM TO BE SOLVED: To provide a normally off-type high withstand voltage high frequency switching element, which can interrupt a large anode current at high speed by a small reverse current by applying a large reverse gate voltage, even if the impurity concentration of a base area is reduced for making a forward inhibition voltage between an anode and a cathode large in a GTO thyristor where a cathode shorting area with low resistance, which directly sweeps out an accumulation carrier in a base area to a cathode electrode at the time of turn-off, is installed. SOLUTION: A p-type gate area (p+) 12 and a gate electrode 17 are formed on one surface of an n-type silicon substrate (n-) 11, and a p-type cathode shorting area (p+) 13 is formed in the center of the surface of the silicon substrate which is surrounded by the gate area (p+). An n-type depletion layer suppressing area (n) 14 whose impurity concentration is large is formed between the cathode shorting area and the silicon substrate surrounded by the gate area. An n-type cathode area (n-) 15 adjacent only to the gate area is formed and a cathode electrode 18 which is brought into contact with the surface of the cathode area and the surface of the cathode shorting area is installed.
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