METHOD FOR PERFORMING ANISOTROPIC PLASMA ETCHING USING FLUOROCHEMICAL SUBSTANCE THAT IS NON- CHLOROFLUOROCARBON

摘要

PROBLEM TO BE SOLVED: To provide a method by which an object to be etched can be readily dry-etched with high dimensional accuracy by reducing the readhering quantity of etch residues or removing the etching generated substance at dry etching. SOLUTION: This method of removing a metal from the selected regions of a substrate includes a step of causing the metal to deposit on the substrate, a step of exposing the selected metallic region by forming and patterning a mask, and a step of exposing the metal to a fluorine-containing plasma. The method also includes a step of heating the metal to a temperature, at which a volatile metal-fluorine compound is produced and a step of discharging the metal-fluorine compound.