| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma-etching method using less fluorine gas, while selective etching is performed, without the use of fluorine gas of high GWP. SOLUTION: Fluorine gas, helium, and water vapor are introduced into a chamber for generating a plasma. The water vapor is decomposed into hydrogen and oxygen in a plasma processing, which combines with fluorine of decomposed fluorine gas to generate hydrogen fluoride. The fluorine also combines with an insulating film 36, which is decomposed in plasma process and is to be etched, to generate fluorine active species different from hydrogen fluoride. By adjusting the generation factor of fluorine active species, planarization etching, and the like, of an insulating film 36 and an SOG film 38 is performed in selective etching.
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