| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device having a tapered through hole formed without wet etching the through hole having a taper shape in which a sidewall face has a suitable slope and good coverage of a wiring material and without using a polysilicon. SOLUTION: The method for manufacturing the semiconductor device having the tapered through hole comprises the steps of forming a interlayer dielectric 2 and a first plasma nitride film 7 on a lower layer wiring 1, dry etching with a photoresist 3 as a mask, and forming a recess 8 on a surface of the dielectric 2. The method further comprises the steps of removing the photoresist 3, forming a second plasma nitride film 9, etching back the film, and forming a sidewall 9a made of the second film 9. The method also comprises the steps of then dry etching under the condition in which an etching velocity of the dielectric 2 with respect to that of the sidewall 9a becomes about 10, thereby obtaining the through hole 10 having a tapered shape of an optimal slope.
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