| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a storage system having sufficient durability for especially rewriting through the system comprises a memory cell of multi-level storage. SOLUTION: This system is a storage system having storage sections (101-1 to 101-k) comprising memory cells storing (n) levels (n: natural number of 3 or more), and is provided with a level storing means (102) storing that data of which level a memory cell holds even when a power source of a chip is cut off, and a control means (100) controlling that the memory cell is operated with which level.</p> |
