发明名称 |
THINNING DEVICE AND METHOD OF FLAT OBJECT |
摘要 |
PROBLEM TO BE SOLVED: To provide a device and method for thinning a flat object for removing a micro crack layer on the surface such as a wafer in a short unit time and with improved working efficiency. SOLUTION: A semiconductor wafer where a protection film is formed on a circuit surface is taken out of a wafer accommodation part 2 by a wafer transport part 3, is aligned by a pre-center part 5, and then is mechanically polished by a polishing part 6. The semiconductor wafer after polishing is washed with washing liquid by a wafer washing part 10 for removing foreign objects, and then is sent to first and second plasma treatment parts 4A and 4B slowly by the wafer transport part 3 so that the semiconductor wafer cannot be cracked for performing dry etching by plasma etching. When the etching is completed, the semiconductor wafer is carried out speedily from the first and second plasma treatment parts 4A and 4B by the wafer transport part 3.
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申请公布号 |
JP2001358096(A) |
申请公布日期 |
2001.12.26 |
申请号 |
JP20000179664 |
申请日期 |
2000.06.15 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
HAJI HIROSHI;ARITA KIYOSHI |
分类号 |
H01L21/302;H01L21/304;H01L21/3065;(IPC1-7):H01L21/304;H01L21/306 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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