| 摘要 |
<p>PROBLEM TO BE SOLVED: To apply highly resolving energy analysis to a secondary electron generated from a substrate under a high and variable retarding voltage condition, and to materialized a highly sensitive inspection by obtaining an excellent potential contrast, in a method for inspecting a defect, a foreign matter, a residue and the like in the identical design pattern of a semiconductor device by an electron beam. SOLUTION: An accelerated secondary electron generated from a substrate surface is deflected, and its energy is analyzed by an energy filter and a detector provided away from an optical axis. A shield electrode to obtain high energy resolution, a means for adjusting the converging/diverging condition of the secondary electron, a means for optimizing the uniformity coefficient of the threshold electric field distribution of the filter, and a means for converging passing electrons are provided in the energy filter, in order to carry out optimum control in accordance with the condition of the secondary electron. As a result, a potential contrast can be obtained under a desired condition in response to the process and the kind of a specimen to be inspected, a defect can be highly sensitively judged by accurately imaging a charged condition on the surface of the specimen, and a semiconductor wafer as well as an insulating material can be highly speedily and highly accurately inspected.</p> |
