| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide an inverter in which a threshold potential can be changed easily at a low cost. SOLUTION: In the inverter 20, sources of three P channel MOS transistors 21-23 are connected with the line of power supply potential VCC, drain of the MOS transistor 21 is connected with an output node 20b, fuses F1, F2 are connected, respectively, between the drain of the MOS transistors 22, 23 and the output node 20b, an N channel MOS transistor 24 is connected between the output node 20b and a ground potential GND, and the gates of the MOS transistors 21-24 are connected with an input node 20a. Threshold potential VTH of the inverter 20 can be lowered by blowing out the fuses F1, F2.</p> |
