| 摘要 |
PROBLEM TO BE SOLVED: To provide a photoelectric converting device where the resistance of a gate line is small, driving speed is fast, leak current is less and Vth dispersion is small. SOLUTION: The gate electrode of TFT is connected to a common gate line and a first gate line (Vg1 line) to a gate driving device. A second gate line (Vg2 line) is connected to the first gate line in parallel though CH and covers TFT. The source/drain electrodes of TFT are connected to the common signal line (Sig line) and the Sig line is connected to a reader. A charge generated in a photoelectric converting element by incident light is transferred to the signal line by a driving pulse applied by the gate driving device and it is read by the reader. The Vg1 line of a first metal layer is connected to the Vg2 line of a third metal layer through CH, and the Sig line is formed in a second metal layer. Thus, the resistance of the gate line is reduced and driving speed increases. Then, leak current and the fluctuation of Vth are reduced.
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