发明名称 Method for fabricating silicon semiconductor discrete wafer
摘要 A method of fabricating a silicon semiconductor discrete wafer while dressing the grinding wheel is disclosed that assures excellent finishing accuracy and productivity. The dressing of the grinding wheel includes mixing air and grinding water from a surface grinding process including semiconductor chips lapped with abrasive grains having a count of at least #2000 and no more than #6000 and jetting the mixed air and grinding water as minute water drops back onto the surface of the grinding wheel during grinding of a wafer. Both cut surfaces are ground to a predetermined thickness with the dressed grinding wheel (via a surface grinding machine). The processing surface is wet-etched as the final processing.
申请公布号 US6332833(B1) 申请公布日期 2001.12.25
申请号 US19990442462 申请日期 1999.11.18
申请人 NAOETSU ELECTRONICS COMPANY 发明人 OHSHIMA HISASHI;SATOH TSUTOMU
分类号 B24B7/22;B24B37/04;B28D5/02;H01L21/02;H01L21/304;H01L21/306;(IPC1-7):B24B53/00 主分类号 B24B7/22
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