| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for depositing an oxide thin film on a base material by an ALD type method. SOLUTION: The vapor phase pulse of at least one metallic source material and the vapor phase pulse of at least one oxygen source material are alternatively fed to a reaction space and are brought into contact with a base material. In the case a yttrium source material and a zirconium source material are alternatively used as the metallic source materials, a thin film of yttrium stabilized zirconium oxide(YSZ) is deposited on a substrate. |
