Semiconductor processing method of forming openings in a material

摘要

The invention includes a semiconductor processing method which comprises forming a first material layer over a substrate. A second material layer is formed over the first material layer. Photoresist is deposited over the second material layer, and an opening is formed within the photoresist to the second material layer. The second material layer is etched through the photoresist opening to a degree insufficient to outwardly expose the first material layer. The photoresist is then stripped from the substrate. Subsequently, the second material layer and the first material layer are blanket etched.