发明名称
摘要 <p>PROBLEM TO BE SOLVED: To lower the drive voltage of an electron emitting element resulting from electric field emission and preclude change of the emission current characteristics caused by leaving in the atmosphere, heating in the atmosphere, or heating in a vacuum. SOLUTION: The electron emitting element is equipped with a silicon substrate 14, an emitter 11 at least whose surface is formed by a porous silicon layer 15 on the base board of silicon, and a lead-out electrode 13 provided around the emitter 11 while a certain spacing is reserved in between. A metal or a good conductive member is provided at least either of on the surface and inside of the porous silicon layer 15 of the emitter 11.</p>
申请公布号 JP3241257(B2) 申请公布日期 2001.12.25
申请号 JP19960005520 申请日期 1996.01.17
申请人 发明人
分类号 H01J9/02;H01J1/30;H01J1/304;(IPC1-7):H01J9/02 主分类号 H01J9/02
代理机构 代理人
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