| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for growing crystal by which a good-quality large crystal can be made to grow at the temperature far lower than the melting point or the boiling point of the crystal even from such a material as is not dissolved in usual liquid solvent at room temperatures and is apt to be decomposed at the melting point or the vaporizing point and to provide a functional element device using the crystal obtained by this crystal growing method. SOLUTION: This method for growing crystal comprises an initial crystallization step and a recrystallization step. In the initial crystallization step, a crystal raw material is dissolved by heating a melting solvent, which is solid at the room temperature and the melting point of which is lower than that of the objective crystal, to prepare the solution and the objective crystal is then made to grow by supersaturating the objective crystal component in the solution. In the recrystallization step, which is executed once or repeated several times, the objective crystal is obtained by recrystallization namely by supersaturating the objective crystal component in the solution, keeping it in an unsaturated state and then supersaturating it again.
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