发明名称 |
Trench storage DRAM cell with vertical three-sided transfer device |
摘要 |
A pair of dynamic random access memory cells having each end of the active area surrounded on three sides by a gate conductor. The width of each end of the active area that is surrounded by a gate conductor preferably is less than fifty percent of the width of the deep trench intersected by that end of the active area.
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申请公布号 |
US6333533(B1) |
申请公布日期 |
2001.12.25 |
申请号 |
US19990394964 |
申请日期 |
1999.09.10 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
FURUKAWA TOSHIHARU;HAKEY MARK C.;HOLMES STEVEN J.;HORAK DAVID V.;KANARSKY THOMAS S.;MANDELMAN JACK A. |
分类号 |
H01L21/8242;H01L27/108;(IPC1-7):H01L27/108 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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