| 摘要 |
PROBLEM TO BE SOLVED: To alternately feed different raw material gases onto a substrate by providing gas feed parts for feeding these gases to the respective separate growing chambers and exhaust port for guiding the gases away from the other growing chambers and exhausting them to the outside. SOLUTION: A growing chamber 1 is partitioned by a vertical partition plate 2 at the center into two separate growing chambers with raw material gas feed ports 5-8, disposed perpendicularly to the partition plate 2 for feeding trimethyl gallium from the port 5, arsine from the holes 6, 7, trimethyl aluminum from the port 8 and H gas from a feed hole 9 into the chamber 1, while they are exhausted out through first exhaust ports 10, 11 and second exhaust ports 12, 13. Thus different raw material gases are alternately fed onto the substrate 4, and a compd. semiconductor is grown easily. |
