| 摘要 |
A method for reducing non-homogenous density during forming process of borophosphosilicate glass layer, at least includes following basic steps: delivers an oxygen gas through a gas pipeline into a chamber, and also delivers a tetraethyl-orthosilicate gas, a tri-ethyl-borate gas and a tri-ethyl-phosphate gas through a reactant pipeline into a bypass pipeline to let the chamber is filled by only the oxygen gas, wherein the bypass pipeline is adjacent to the chamber; whenever flow of the oxygen gas in both the gas pipeline and the chamber is stable and flow of both the tetraethyl-orthosilicate gas, the tri-ethyl-borate gas and the tri-ethyl-phosphate gas in the reactant pipeline also is stable, closes the reactant pipeline and then delivers the tetraethyl-orthosilicate gas, the tri-ethyl-borate gas and the tri-ethyl-phosphate gas into the chamber; and performs at least a process to form a borophosphosilicate glass layer on a wafer that locates inside the chamber. Obviously, one essential characteristic of the method is reactants are delivered into chamber after flow of reactants are stable, and then non-homogenous density of borophosphosilicate glass layer that induced by unstable flow is effectively prevented.
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