发明名称 |
Static type semiconductor memory device that can suppress standby current |
摘要 |
A memory cell power supply line is provided to supply a ground potential corresponding to each column in a regular memory cell array. Among fuse elements, the fuse element corresponding to the memory cell column that is to be subjected to redundancy replacement is decoupled, whereby supply of the ground potential to the regular memory cell column to be replaced is suppressed.
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申请公布号 |
US6333877(B1) |
申请公布日期 |
2001.12.25 |
申请号 |
US20000606316 |
申请日期 |
2000.06.29 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
NAGAOKA HIDEAKI;AKAI KIYOYASU |
分类号 |
G11C11/413;G11C29/00;G11C29/04;(IPC1-7):G11C7/00 |
主分类号 |
G11C11/413 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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