发明名称 |
Process for manufacture of integrated circuit device using inorganic/organic matrix comprising polymers of three dimensional architecture |
摘要 |
The invention relates to a process for forming an integrated circuit device comprising (i) a substrate; (ii) metallic circuit lines positioned on the substrate and (iii) a dielectric material positioned on the circuit lines. The dielectric material comprises porous organic polysilica.
|
申请公布号 |
US6333141(B1) |
申请公布日期 |
2001.12.25 |
申请号 |
US19980111840 |
申请日期 |
1998.07.08 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CARTER KENNETH RAYMOND;DIPIETRO RICHARD ANTHONY;HAWKER CRAIG JON;HEDRICK JAMES LUPTON;LEE VICTOR YEEWAY;MILLER ROBERT DENNIS;VOLKSEN WILLI;YOON DO YEUNG |
分类号 |
G03F7/039;G03F7/075;H01L21/312;H01L21/316;H01L21/768;H01L23/532;(IPC1-7):G03C5/00 |
主分类号 |
G03F7/039 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|