发明名称 |
Method for preventing aluminum intrusions |
摘要 |
A semiconductor wafer includes a substrate, an aluminum layer on the substrate, an anti-reflection coating on the aluminum layer, a dielectric layer on the anti-reflection coating, and a via hole that passes through the dielectric layer and the anti-reflection coating down to a predetermined depth within the aluminum layer. A titanium layer is formed on the bottom and on the walls of the via hole. A physical vapor deposition process is then performed to form a first titanium nitride layer on the titanium layer. A chemical vapor deposition process is then performed to form a second titanium nitride layer on the first titanium nitride layer.
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申请公布号 |
US6333261(B1) |
申请公布日期 |
2001.12.25 |
申请号 |
US20000584697 |
申请日期 |
2000.06.01 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
LIN CHI-JUNG;HUANG JYH-J;LU HORNG-BOR;WU KUN-LIN |
分类号 |
H01L21/768;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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