| 摘要 |
PROBLEM TO BE SOLVED: To provide a high frequency ion plating apparatus which can easily generate and maintain plasma even under vacuum of the low pressure and generate the sufficient self-bias voltage. SOLUTION: This high frequency ion plating apparatus is constituted so that a vapor deposition material source 10 and a substrate holding rotary electrode 2 are disposed in a vacuum container 1 with the gas of appropriate amount introduced therein, the high frequency power is supplied via a mechanical contact 3, and the ion in the plasma generated in the high frequency discharge space is stuck on a surface of the film on a substrate by the self bias voltage generated between the substrate holding rotary electrode and the film. And an auxiliary electrode 9 for generating plasma is disposed, which is supplied with the high frequency power different from the high frequency power supplied to the substrate holding rotary electrode 2. Two high frequency powers which are respectively supplied to the substrate holding rotary electrode and the auxiliary electrode are used at the different frequency and/or at the different power.
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