| 摘要 |
PURPOSE:To improve light takeout efficiency by providing a first electrode in an edge region, and providing a region, where the first electrode does not exist, at one part excluding the edge region, and providing a second electrode at the rear of a semiconductor substrate. CONSTITUTION:On an n-GaAs substrate 10 are grown an n-GaAs buffer layer 11, an n-InGaAlP clad layer 12, an InGaAlP active layer 13, and a p-InGaAlP clad layer 14, and on this center and at the edge regions are grown p-InGaP middle band gap layers 15 and p-GaAs contact layers 16. A p-side electrode 17, thereon, and an n-side electrode 18, at the bottom, are made. By constituting it this way, the light emitting region 21 at the center and the light emitting regions 22 at edges are formed, and a beam 24 emitted from the can also go out without being subjected to light absorption at the active layer 13, so the beam 24 emitting from the edge has the same light emitting wavelength as a beam 23 emitted from the top. Accordingly, necessity to remove the beam 24 emitted from the edge vanished, and light takeout efficiency improves. |
