发明名称 Improvements in or relating to transistors
摘要 824,255. Transistors. PYE Ltd. Sept. 11, 1956 [Sept. 12, 1955], No. 26027/55. Class 37. A transistor comprises a wafer of semiconductor material with emitter and collector electrodes on its opposite surfaces, mounted on an apertured base electrode which surrounds or peripherally overlaps the wafer, two plate-like contact members, each in contact with one of the emitter and collector electrodes, and at least one sealing member of insulating material surrounding the wafer and sealed to the contact members. Fig. 1 shows a transistor in which a wafer 1 of germanium, mounted on an annular base electrode 2, is formed with emitter and collector electrodes la, 1b of indium which are contacted by the indented portions of two plates 3, and two silvered glass rings 4 between the electrode 2 and plates 3, which are made of " Kovar " (Registered Trade Mark) or similar material form under heat an hermeticallysealed casing. Base electrode 2 and plates 3 comprise tags 5 for external connections. A domed cover 6 of resilient insulating material may be provided. In Fig. 3 (not shown) the collector electrode contacts a plate provided with a threaded stud for mounting the transistor on a support to assist conduction of heat away from the device, and the seal is provided by metal-coated ceramic rings. In Fig. 4 the apertured metal base electrode 32 is mounted on a plate 36 by supports 39 of insulating material, and a glass envelope, which may be integral with contact member 33, is sealed on to the plate 36. Specification 780,251 is referred to in the Provisional Specification.
申请公布号 GB824255(A) 申请公布日期 1959.11.25
申请号 GB19550026027 申请日期 1955.09.12
申请人 PYE LIMITED 发明人 FULLER DENNIS QUINTRELL
分类号 H01L23/051 主分类号 H01L23/051
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