METHOD OF MAKING METAL OXIDE AND CONTACT STRUCTURE IN INTEGRATED CIRCUIT INCLUDING ETCH STOP LAYER,申请号KR1020010033434-传众专利搜索

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发明名称	METHOD OF MAKING METAL OXIDE AND CONTACT STRUCTURE IN INTEGRATED CIRCUIT INCLUDING ETCH STOP LAYER
摘要
申请公布号	KR20010113011(A)	申请公布日期	2001.12.24
申请号	KR1020010033434	申请日期	2001.06.14
申请人		发明人
分类号		主分类号
代理机构		代理人
主权项
地址

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