发明名称 |
Thick single crystal diamond layer method for making it and gemstones produced from the layer |
摘要 |
A layer of single crystal CVD diamond of high quality having a thickness greater than 2 mm. Also provided is a method of producing such a CVD diamond layer. The method involves the homoepitaxial growth of the diamond layer on a low defect density substrate in an atmosphere containing less than 300ppb nitrogen. Gemstones can be manufactured from the layer. |
申请公布号 |
AU6624601(A) |
申请公布日期 |
2001.12.24 |
申请号 |
AU20010066246 |
申请日期 |
2001.06.14 |
申请人 |
DE BEERS INDUSTRIAL DIAMONDS (PROPRIETARY) LIMITED |
发明人 |
GEOFFREY ALAN SCARSBROOK;PHILIP MAURICE MARTINEAU;BARBEL SUSANNE CHARLOTTE DORN;ANDREW MICHAEL COOPER;JOHN LLOYD COLLINS;ANDREW JOHN WHITEHEAD;DANIEL JAMES TWITCHEN |
分类号 |
A44C17/00;C23C16/27;C30B25/02;C30B25/10;C30B25/18;C30B29/04;H01L21/205;H01L21/3065 |
主分类号 |
A44C17/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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