发明名称 Thick single crystal diamond layer method for making it and gemstones produced from the layer
摘要 A layer of single crystal CVD diamond of high quality having a thickness greater than 2 mm. Also provided is a method of producing such a CVD diamond layer. The method involves the homoepitaxial growth of the diamond layer on a low defect density substrate in an atmosphere containing less than 300ppb nitrogen. Gemstones can be manufactured from the layer.
申请公布号 AU6624601(A) 申请公布日期 2001.12.24
申请号 AU20010066246 申请日期 2001.06.14
申请人 DE BEERS INDUSTRIAL DIAMONDS (PROPRIETARY) LIMITED 发明人 GEOFFREY ALAN SCARSBROOK;PHILIP MAURICE MARTINEAU;BARBEL SUSANNE CHARLOTTE DORN;ANDREW MICHAEL COOPER;JOHN LLOYD COLLINS;ANDREW JOHN WHITEHEAD;DANIEL JAMES TWITCHEN
分类号 A44C17/00;C23C16/27;C30B25/02;C30B25/10;C30B25/18;C30B29/04;H01L21/205;H01L21/3065 主分类号 A44C17/00
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