| 摘要 |
PROBLEM TO BE SOLVED: To realize a semiconductor device having a shallow junction depth by suppressing excessive accelerated diffusion. SOLUTION: A method for manufacturing the semiconductor device comprises the steps of removing a first sidewall 15, by using a mixed liquid of fluoric acid and hot phosphoric acid, and then implanting P-type impurity ions having a relatively large mass number, such as In ions through an implantation protective film 14 under the implanting conditions of implantation energy of about 200 keV and an implantation dose of about 5×1013/cm2, in a pocket region disposed at a lower side of a side face of a gate electrode 13 in a semiconductor substrate 11 having a gate electrode 13 as a mask. Thus, implantation using the heavy ion is conducted to the pocket region to positively make a pocket diffusion layer 17 amorphous.
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