| 摘要 |
<p>PROBLEM TO BE SOLVED: To read out required data at a high speed and to improve convenience in a non-volatile semiconductor memory having a background operation function. SOLUTION: In a bank pointer (1), a signal specifying an operation mode to be performed is generated according to the coincidence/uncoincidence of the prescribed bank addresses of address signals (AE, AI) from an address buffer (901) and it is given to an internal control circuit (2). When a coincidence detecting signal MTH is activated, the internal control circuit (2) performs an operation mode specified by a command CMD from the outside, when an uncoincidence detecting signal is activated, the control circuit (2) sets an array read-mode reading out data of a memory cell of a bank specified by an address signal AD from the outside.</p> |
