| 摘要 |
PROBLEM TO BE SOLVED: To resolve the problem of the conventional insulation gate type semiconductor device that although the density of cells present in a trench-type power MOSFET has been improved in order to reduce its on-resistance highly for integrating the cells, there is a limit in fining of the cell and there arise contact faults due to the generation of silicon nodules originated from the miniaturization of the body contact region of the cell. SOLUTION: In each cell of the trench-type power MOSFET, a source region protruded in the form of pleats from a strip body contact region is formed. Thereby, the shared use of a substrate diode is made possible, and the peripheral length of the source region is made large to also enable increase in the widths of the channels, formed from the source region in the depth directions of trenches. Thereby, since more current path than conventional ones can be secured, advantage is obtained which can contribute much to the reduction in the on-resistance of the trench-type power MOSFET.
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