| 发明名称 |
SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD |
| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor device and a method for manufacturing the same, for improving separating characteristics and a withstand voltage by suppressing a board floating effect, in a device having a separately insulating film of a PTI structure. SOLUTION: A silicon nitride film is formed between interlayer insulating films covering an upper surface of an element formed on a surface of a semiconductor layer.
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| 申请公布号 |
JP2001352042(A) |
申请公布日期 |
2001.12.21 |
| 申请号 |
JP20000171818 |
申请日期 |
2000.06.08 |
| 申请人 |
MITSUBISHI ELECTRIC CORP |
发明人 |
MATSUMOTO TAKUJI;IWAMATSU TOSHIAKI;HIRANO YUICHI |
| 分类号 |
H01L21/76;H01L21/314;H01L21/318;H01L21/762;H01L21/768;H01L21/8238;H01L21/84;H01L23/522;H01L27/08;H01L27/092;H01L27/12;H01L29/786;(IPC1-7):H01L27/08;H01L21/823 |
主分类号 |
H01L21/76 |
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