| 摘要 |
PROBLEM TO BE SOLVED: To provide an X-ray light emitting element to emit light by being irradiated with an X-ray capable of achieving excellent light transmittance, light emitting brightness and efficiency, and radiation ray resistance. SOLUTION: A semiconductor layer 12 of GaN or the like having a band gap is provided on a substrate 11, and by irradiating with an X-ray having energy higher than barrier energy of the band gap, light is emitted at the semiconductor layer 12. Since by thus directly being excited by the X-ray to emit light, an X-ray light emitting element having excellent brightness and efficiency can be obtained. By utilizing thin film monocrystals for the semiconductor layer 12, excellent translucency is provide, and this can be freely controlled. By utilizing the band gap in the semiconductor layer 12, high light emitting brightness and efficiency can be provided, and only light emission of a specific wavelength can be provided. This can be utilized without depending on the wavelength of the X-ray. The crystals easily grows, excellent processing workability is achieved, and high crystalline performance can be provided, achieving excellent radial ray resistance. By forming the semiconductor layer 12 on the substrate 11, a light emitting element which is strong against external impact can be realized.
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