发明名称 METHOD FOR FORMING METAL INTERCONNECTION
摘要 There is disclosed a method of manufacturing a micromechanical device. The method comprises the steps of: (a) etching a substrate (1), having a mask (2) thereon, through an opening in the mask to a desired depth to form a trench (6) having a side wall (4) and a base (5) in the substrate (1); (b) depositing a layer of a protecting substance (7) on the exposed surfaces of the substrate and mask; (c) selectively removing the protecting substance (7) from the base (5); and (d) etching the base (5) using a fluorine-containing etchant. Also disclosed is a micromechanical device formed by the method and an apparatus for manufacturing the micromechanical device.
申请公布号 KR20010112688(A) 申请公布日期 2001.12.21
申请号 KR20000032012 申请日期 2000.06.10
申请人 ANAM SEMICONDUCTOR., LTD. 发明人 KIM, GI YONG
分类号 H01L21/283 主分类号 H01L21/283
代理机构 代理人
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