| 摘要 |
PROBLEM TO BE SOLVED: To reduce all standby current flowing during standby of a ferroelectric memory. SOLUTION: When a ferroelectric memory having a selection transistor, a memory cell, and a short circuit transistor is operated in a VDD/2 mode, the short circuit transistor is controlled during a standby period after read-out or write-in process controlled through word lines to which memory cells are arranged respectively and bit lines pre-charged in a pre-charge period, electrodes of an accumulation capacitor are short-circuited, a standby period is made temporally same as a pre-charge period, and bit lines have an another potential for both electrodes of accumulation potential.
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