发明名称 METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a method by which problem (deterioration of dimensional accuracy) caused by halation and interference due to light reflected from a substrate is solved and a a fine high accuracy pattern is formed even on a substrate having a high reflectance, a substrate with a transparent film or the like. SOLUTION: An antireflection film in which an upper layer film comprises an organic film acting as an interference film to light for exposure and a lower layer film is a light shielding film having a higher rate of absorption of light for exposure than the upper layer film is formed between a substrate to be worked and a resist film.
申请公布号 JP2001350268(A) 申请公布日期 2001.12.21
申请号 JP20010114766 申请日期 2001.04.13
申请人 HITACHI LTD 发明人 TANAKA TOSHIHIKO;UCHINO MASAICHI;ASAI NAOKO
分类号 G03F7/11;G03F7/20;H01L21/027 主分类号 G03F7/11
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