发明名称 |
METHOD FOR PRODUCING SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a method by which problem (deterioration of dimensional accuracy) caused by halation and interference due to light reflected from a substrate is solved and a a fine high accuracy pattern is formed even on a substrate having a high reflectance, a substrate with a transparent film or the like. SOLUTION: An antireflection film in which an upper layer film comprises an organic film acting as an interference film to light for exposure and a lower layer film is a light shielding film having a higher rate of absorption of light for exposure than the upper layer film is formed between a substrate to be worked and a resist film. |
申请公布号 |
JP2001350268(A) |
申请公布日期 |
2001.12.21 |
申请号 |
JP20010114766 |
申请日期 |
2001.04.13 |
申请人 |
HITACHI LTD |
发明人 |
TANAKA TOSHIHIKO;UCHINO MASAICHI;ASAI NAOKO |
分类号 |
G03F7/11;G03F7/20;H01L21/027 |
主分类号 |
G03F7/11 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|