| 摘要 |
PROBLEM TO BE SOLVED: To enable a metal-embedded wiring provided in a semiconductor device for realizing highly improved insulation between metal wiring and an insulation film provided around the wiring. SOLUTION: A metal wiring 120, consisting of a metal member 122 and a barrier metal 121, is formed in a groove 111 cut in an insulating film 110 formed on a semiconductor substrate. A first metal diffusion-preventing film 131 is formed on the insulating film 110, coming into contact with the upper part of the barrier metal 121 formed on the side of the metal member 122. Furthermore, a second metal diffusion-preventing film 132 is formed on the first metal diffusion-preventing film 131 and the metal wiring 120. |
