发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR WAFER WITH ANISOTROPIC CONDUCTIVE FILM
摘要 PROBLEM TO BE SOLVED: To make a highly reliable semiconductor device in which an anisotropic conductive film is jointed firmly to a chip and/or a circuit board via solder layers, and/or no short-circuiting occurs between electrodes on the chip and/or circuit board. SOLUTION: After the solder layers 13 are formed on one/or both end sections of conducting paths 11 of the anisotropic conductive film 1, the film substrate 12 of the film 1 is thermally melt-stuck to a semiconductor element 2 and to the circuit board 3, and thereafter, the solder layers 13 are thermally melt-stuck to the element 2 and/or the board 3.
申请公布号 JP2001351944(A) 申请公布日期 2001.12.21
申请号 JP20000171670 申请日期 2000.06.08
申请人 NITTO DENKO CORP 发明人 NISHI KENSUKE;YAMAGUCHI YOSHIO;HOTTA YUJI
分类号 H01L21/60;(IPC1-7):H01L21/60 主分类号 H01L21/60
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