| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing device and method, capable of lowering processing temperature, restraining discharging of metals from affecting a substrate, and efficiently carrying out formation of a film, a pretreatment, and a post-treatment. SOLUTION: A semiconductor manufacturing device is equipped with a reaction chamber 1 for subjecting a substrate 8 to prescribed processing, holding it horizontal in position, a heater 3 heating the substrate 8, gas feed openings 10A and 10B which are provided confronting each other through the intermediary of the surface of the substrate 8 to form a flow of gas nearly in parallel with the surface of the substrate 8, and gas exhaust vents 11A and 11B. Discharge coils 12A and 12B are provided as a plasma source above the flow of gas inside the reaction chamber 1, and active seeds generated by the plasma sources are fed nearly in parallel with the substrate 8 and made to flow a prescribed number of times, varied in the direction of the flow.
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