| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory in which the voltage of bit lines can be amplified at a high speed without using an amplifier having a large drive capability. SOLUTION: An amplifying means connected to a memory cell 13 through bit lines BLB, BLBX, BL, BLX, amplifying the voltage of bit lines to a prescribed level in accordance with information stored in the memory cell 13, and outputting it to a read-out circuit is provided with switches 22a, 22b which can cut off the bit lines BLB, BLBX, BL and the BLX and an amplifier SA2 connected to the bit lines BLBX, BLX between these switches 22a, 22b and a read-out circuit, after information of the memory cell 13 is transmitted by the bit lines BLB, BLBX, connection between the bit lines BLB, BL and the amplifier is cut off by the switches 22a, 22b, and the voltage of only the bit lines BLBX, BLX connected to a read-out circuit is amplified to the prescribed level by the amplifier SA2, and outputted to the red-out circuit.
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