SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device which is a circuit required to be driven by a comparatively high voltage and in which the reliability of a transistor pulling up voltage can be secured. SOLUTION: A drive circuit DR1 comprises a voltage converting circuit CVCKT receiving a block selecting signal BSi and converting it into a signal of a boosted potential level, and N channel MOS transistor TN14 and N channel MOS transistor TN 13 connected in series between a boosted potential Vpp and a ground potential GND. The gate of the transistor TN13 is connected to a transistor TP11 and a connection node n11 of the TN11, the potential level of a connection node of the transistor TN14 and the TN13 is outputted as a signal BLi (i, 0).