COPPER INTERCONNECTION WIRING FOR IC CHIP

摘要

PROBLEM TO BE SOLVED: To provide a method for forming a barrier layer on the copper metallic wiring of a semiconductor integrated circuit. SOLUTION: The barrier layer is effective to both wire bonding interconnection wiring and to solder bump interconnection wiring. The barrier layer is a Ti/Ni layer formed on copper. An aluminum bonding pad is formed on the barrier layer for the wire bonding interconnection wiring, and a copper bonding pad is formed on the barrier layer for the solder bump interconnecting wiring.