发明名称 WIRING BOARD AND SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To form a film for preventing diffusion of solder at a low cost, and to provide a reliable wiring board or semiconductor device. SOLUTION: A nickel layer is formed on a wiring layer, and the thickness of the nickel layer should is set to a range of 0.8 to 5.0μm.
申请公布号 JP2001352005(A) 申请公布日期 2001.12.21
申请号 JP20000174200 申请日期 2000.06.06
申请人 HITACHI LTD 发明人 TENMYO HIROYUKI;KAZAMA ATSUSHI;ITO MITSUKO;MIURA KAZUMA;YAMAGUCHI YOSHIHIDE;HOZOJI HIROYUKI;INOUE KOSUKE;DAIROKU NORIYUKI
分类号 H01L23/12;H01L21/60;(IPC1-7):H01L23/12 主分类号 H01L23/12
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