发明名称 HIGH-SENSITIVITY OPTICAL DETECTION CIRCUIT
摘要 PROBLEM TO BE SOLVED: To realize an optical interconnection, connecting CMOS transistor LSIs at a high speed by driving CMOS transistor at a high speed. SOLUTION: Two floating type semiconductor laser structure elements or lateral junction type semiconductor laser structure elements, having an electrode divided into a plurality of sections, are employed. A set of diodes 21, 31 and 23, 33 of respective semiconductor laser structure elements are applied sequentially with a forward bias, so that they function as an optical amplifier. Another set of diodes 22, 32 and 24, 34 of respective semiconductor laser structure elements are applied with a bias and connected, to be used as photodetectors. Two photodetectors are connected to function as a differential detector, and the output of the differential detector is connected with the input gate of a CMOS transistor 9. A high absorption region 35 is provided at a part so that laser oscillation will not take place, even if a high current is fed to the optical amplifier.
申请公布号 JP2001352095(A) 申请公布日期 2001.12.21
申请号 JP20000167328 申请日期 2000.06.05
申请人 NATL INST OF ADVANCED INDUSTRIAL SCIENCE & TECHNOLOGY METI 发明人 SUZUKI KATSUHIRO;SHIMIZU MITSUTOSHI
分类号 G01J1/44;H01L27/14;H01L27/15;H01L31/10;H01S5/026;H01S5/22;H04B10/40;H04B10/50;H04B10/60;H04B10/67 主分类号 G01J1/44
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