| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device with which solder bumps can be formed on electrode pads through electroplating. SOLUTION: In the method of manufacturing a semiconductor device, electrode pads 14 of a plurality of semiconductor devices 12, formed on the surface of a semiconductor wafer 11 in a prescribed array with spaces for dicing lines L in between are formed by using a copper material and first wiring 1610 for plating, is formed on each dicing line L by using the copper material. In addition, a second wiring 16 for plating which connects electrode pads 14 to the first wiring 1610, existing in the vicinities of the pads 14, is formed of the copper material and plated solder layers 19 are formed on the surfaces of the pads 14 by using the second wiring 16, which connects the pads 14 to the first wiring 1610. Thereafter, solder bumps 15 are formed on the surfaces of the pads 14, by melting the plated solder layers 19 through heat treatment, and individual semiconductor chips 13 are formed by dicing the wafer 11 along the dicing lines L, together with the first and second wiring 1610 and 16 for plating. |
